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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX77 DESCRIPTION With TO-220C package Low saturation voltage Complement to type BDX78 Wide area of safe operation APPLICATIONS For medium power switching and amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IBM PT Tj Tstg PARAMETER Collector-base voltage INCH Collector-emitter voltage Emitter -base voltage GE S AN Open emitter Open base EMIC CONDITIONS OND TOR UC VALUE 100 80 5 8 12 3 UNIT V V V A A A W ae ae Open collector Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae 60 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.08 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX77 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current CONDITIONS IC=0.2A ;IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=3A; IB=0.3A IC=6A; IB=0.6A IC=6A; IB=0.6A VCE=30V ;IB=0; VCB=40V ;IE=0;Tj=150ae VEB=5V; IC=0 MIN 80 100 5 1.0 1.5 2.0 0.2 1.0 TYP. MAX UNIT V V V V V V mA mA mA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEO ICBO IEBO hFE fT VBE Emitter cut-off current DC current gain ANG CH Transition frequency Base-emitter on voltage Switching times ton toff IN EMIC ES IC=0.3A ; VCE=3V IC=3A;VCE=2V IC=2A IB1=-IB2=0.2A; IC=1A ; VCE=2V DUC ON 30 7.0 TOR 0.5 1.5 MHz V Turn-on time Turn-off time 1.0 4.0 |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDX77 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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